2N6260

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Low saturation voltage ·Wide safe operating area APPLICATIONS ·Power switching circuits ·High-fidelity amplifers ·Solenoid drivers ·Series and shunt-regulator driver and output stages PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6260 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 50 40 7 4 2 29 150 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 3.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1 A ; IB=0 IC=1.5A; IB=0.15A IC=1.5A ; VCE=2V VCE=40V;VBE(off)=-1.5V TC=150 VCE=30V; IB=0 VEB=7V; IC=0 IC=4A ; VCE=2V IC=1.5A ; VCE=2V 5 20 MIN 80 2N6260 SYMBOL VCEO(SUS) VCEsat VBE ICEV ICEO IEBO hFE-1 hFE-2 TYP. MAX UNIT V 1.5 1.5 0.5 1.0 0.5 0.2 V V mA mA mA 100 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6260 Fig.2 Outline dimensions 3