2N6262

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6262 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for audio amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 170 150 5 10 150 150 -65~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6262 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltge Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=5A ;IB=0.5A IC=10A ;IB=2A IC=3A ; VCE=2V VCE=100V; IB=0 VCE=150V; VBE(off)=1.5V TC=150 VCB=150V; IE=0 VEB=5V; IC=0 IC=3A ; VCE=2V IC=1A;VCE=10V 20 0.8 MIN 150 2.0 3.5 1.8 1.0 0.1 5.0 0.1 0.1 70 MHz TYP. MAX UNIT V V V V mA mA mA mA SYMBOL VCEO(SUS) VCEsat VBEsat VBE ICEO ICEV ICBO IEBO hFE fT 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6262 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3