2N6294

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6294 2N6295 DESCRIPTION ·With TO-66 package ·DARLINGTON ·Complement to type 2N6296/6297 APPLICATIONS ·For high gain amplifier and medium speed switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2N6294 2N6295 Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 2N6294 2N6295 Open collector Open base CONDITIONS Open emitter VALUE 60 80 60 80 5 4 8 80 50 150 -65~200 V A A mA W V UNIT V VCEO VEBO IC ICM IB PT Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 3.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6294 IC=50mA ; IB=0 2N6295 IC=2A ;IB=8mA IC=4A ;IB=40mA IC=4A ;IB=40mA IC=2A ; VCE=3V VCE=RatedVCE;VBE(off)=1.5V TC=150 VCE=1/2Rated VCEO; IB=0 VEB=5V; IC=0 IC=2A ; VCE=3V IC=4A ; VCE=3V IC=1.5A ; VCE=3V;f=1.0MHz IE=0 ; VCB=10V;f=0.1MHz CONDITIONS 2N6294 2N6295 SYMBOL MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 2.0 3.0 4.0 2.8 0.5 5.0 0.5 2.0 750 100 4.0 120 MHz pF 18000 V V V V mA mA mA VCEsat-1 VCEsat-2 VBEsat VBE ICEX ICEO IEBO hFE-1 hFE-2 fT COB Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6294 2N6295 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6294 2N6295 4