2N6298

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6300/6301 APPLICATIONS ·General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6298 2N6299 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2N6298 2N6299 Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 2N6298 2N6299 Open collector Open base Open emitter CONDITIONS VALUE -60 -80 -60 -80 -5 -8 -16 -0.12 75 200 -65~200 V A A A W V UNIT V VCEO VEBO IC ICM IB PT Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 2.33 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6298 IC=-0.1A ; IB=0 2N6299 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter on voltage 2N6298 ICEX Collector cut-off current 2N6299 2N6298 ICEO Collector cut-off current 2N6299 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance VCE=-40V; IB=0 VEB=-5V; IC=0 IC=-4A ; VCE=-3V IC=-8A ; VCE=-3V IE=0 ; VCB=-10V;f=0.1MHz IC=-4A; IB=-16mA IC=-8A; IB=-80mA IC=-8A; IB=-80mA IC=-4A ; VCE=-3V VCE=-60V; VBE(off)=-1.5V TC=150 VCE=-80V; VBE(off)=-1.5V TC=150 VCE=-30V; IB=0 CONDITIONS 2N6298 2N6299 SYMBOL MIN -60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V -80 -2.0 -3.0 -4.0 -2.8 -0.5 -5.0 -0.5 -5.0 V V V V mA -0.5 mA -2.0 750 100 300 18000 mA pF 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6298 2N6299 Fig.2 Outline dimensions 3