2N6302

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain @IC=8A APPLICATIONS ·Designed for use in high power audio amplifier applications and high voltage switching regulator circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6302 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Tc=25 CONDITIONS Open emitter Open base Open collector VALUE 140 140 7 16 20 5 150 150 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=10A; IB=1A IC=16A; IB=4A IC=10A; IB=1A IC=8A ; VCE=4V VCE=140V; VBE=-1.5V TC=150 VCB=140V; IE=0 VCE=70V; IB=0 VEB=7V; IC=0 IC=8A ; VCE=4V IC=16A ; VCE=4V IC=1A ; VCE=10V;f=1MHz 15 4 0.2 MIN 140 2N6302 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat VBE ICEV ICBO ICEO IEBO hFE-1 hFE -2 fT TYP. MAX UNIT V 1.0 2.0 1.8 1.5 1.0 5.0 1.0 2.0 1.0 60 V V V V mA mA mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6302 Fig.2 Outline dimensions 3