2N6318

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Complement to type 2N6315/6316 APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6317 2N6318 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N6317 Collector-base voltage 2N6318 2N6317 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N6318 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -5 -7 -15 -2 90 150 -65~200 V A A A W Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.94 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6317 IC=-0.1A ;IB=0 2N6318 IC=-4A; IB=-0.4 A IC=-7A; IB=-1.75A IC=-7A; IB=-1.75A IC=-2.5A ; VCE=-4V 2N6317 ICEO Collector cut-off current 2N6318 2N6317 ICBO Collector cut-off current 2N6318 ICEX IEBO hFE-1 hFE-2 hFE-3 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency VCB=-80V; IE=0 VCE=Rated VCE; VBE(off)=1.5V TC=150 VEB=-5V; IC=0 IC=-0.5A ; VCE=-4V IC=-2.5A ; VCE=-4V IC=-7A ; VCE=-4V IC=-0.25A;VCE=-10V;f=1.0MHz VCE=-40V; IB=0 VCB=-60V; IE=0 VCE=-30V; IB=0 CONDITIONS 2N6317 2N6318 SYMBOL MIN -60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V -80 -1.0 -2.0 -2.5 -1.5 V V V V VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage -0.5 mA -0.25 mA -0.25 -2.0 -1.0 35 20 4 4 100 mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6317 2N6318 Fig.2 outline dimensions 3