2N6322

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6322 DESCRIPTION ·With TO-3 package ·High current and high power capability ·Low collector saturation voltage APPLICATIONS ·For use in high current ,high power applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 300 200 5 30 10 200 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdwon voltage Collector-base breakdwon voltage Emitter-base breakdwon voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=30mA ;IB=0 IC=2m A ;IE=0 IE=2m A ;IC=0 IC=20A ;IB=2A IC=30A; IB=6A IC=30A ; VCE=5V VCE=100V; IB=0 VCE=300V; VBE=0 VEB=5V; IC=0 IC=5A ; VCE=5V IC=20A ; VCE=5V IC=30A ; VCE=5V IC=1A ; VCE=10V 40 12 6 10 MIN 200 300 5 TYP. 2N6322 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat-1 VCEsat-2 VBE ICEO ICES IEBO hFE-1 hFE-2 hFE-3 fT MAX UNIT V V V 1.5 3.0 2.5 2.0 20 20 150 V V V mA µA µA MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6322 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3