2N6328

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·Designed for audio amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6326 2N6327 2N6328 F Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6326 VCBO Collector-base voltage 2N6327 2N6328 2N6326 VCEO Collector-emitter voltage 2N6327 2N6328 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 60 80 100 5 30 7.5 200 200 -65~200 V A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6326 VCEO(SUS) Collector-emitter sustaining voltage 2N6327 2N6328 VCEsat VBEsat VBE Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N6326 ICBO Collector cut-off current 2N6327 2N6328 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency IC=15A; IB=1.5A IC=15A; IB=1.5A IC=8A ; VCE=4V VCB=60V; IE=0 TC=150 VCB=80V; IE=0 TC=150 VCB=100V; IE=0 TC=150 VEB=4V; IC=0 IC=8A ; VCE=4V IC=30A ; VCE=4V IC=0.2 A ;IB=0 2N6326 2N6327 2N6328 SYMBOL CONDITIONS MIN 60 80 100 TYP. MAX UNIT V 1.2 1.5 1.5 1.0 5.0 1.0 5.0 1.0 5.0 1.0 25 6 3 30 V V V mA mA IC=1A ; VCE=10V;f=1.0MHz MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6326 2N6327 2N6328 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3