2N6341

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6338 2N6339 2N6340 2N6341 F Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6338 VCBO Collector-base voltage 2N6339 2N6340 2N6341 2N6338 VCEO Collector-emitter voltage 2N6339 2N6340 2N6341 VEBO IC ICM IBC PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 120 140 160 180 100 120 140 150 6 25 50 10 200 200 -65~200 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6338 Collector-emitter sustaining voltage 2N6339 SYMBOL 2N6338 2N6339 2N6340 2N6341 CONDITIONS MIN 100 120 TYP. MAX UNI T V(SUS)CEO IC=50mA ;IB=0 2N6340 2N6341 140 150 IC=10A; IB=1.0A IC=25A; IB=2.5A IC=10A; IB=1.0A IC=25A; IB=2.5A IC=10A ; VCE=2V VCE=Rated VCEO; VEB=1.5V TC=150 VCB=Rated VCB; IE=0 2N6338 VCE= 50V,IB=0 VCE= 60V,IB=0 50 2N6340 2N6341 VCE= 70V,IB=0 VCE= 75V,IB=0 VEB=6V; IC=0 IC=0.5A ; VCE=2V IC=10A ; VCE=2V IC=25A ; VCE=2V IE=0 ; VCB=10V;f=0.1MHz IC=1A ; VCE=10V;f=10MHz VCC=80V,IC=10A,IB1=1A ;VBE=1.5V 40 0.3 1.0 VCC=80V,IC=10A,IB1=IB2=1A 0.25 50 30 12 300 120 100 1.0 1.8 1.8 2.5 1.8 10 1.0 10 V VCEsat-1 VCEsat-2 VBE sat-1 VBE sat-2 VBE ICEX ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current V V V V V µA mA µA ICEO Collector cut-off current 2N6339 µA IEBO hFE-1 hFE-2 hFE-3 COB fT tr ts tf Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency Rise time Storage time Fall times µA pF MHz µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6338 2N6339 2N6340 2N6341 Fig.2 outline dimensions 3