2N6465

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6465 2N6466 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Complement to type 2N6467 2N6468 APPLICATIONS ·For use in audio amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6465 VCBO Collector-base voltage 2N6466 2N6465 VCEO Collector-emitter voltage 2N6466 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 120 5 4 40 150 -65~150 V A W Open emitter 130 100 V CONDITIONS VALUE 110 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS 2N6465 2N6466 SYMBOL MIN TYP. MAX UNIT 2N6465 VCEO(SUS) Collector-emitter sustaining voltage 2N6466 IC=50mA ;IB=0 100 V 120 VCEsat VBE Collector-emitter saturation voltage IC=1.5A; IB=0.15A IC=1.5A ; VCE=4V 1.2 V Base-emitter on voltage 1.5 V 2N6465 ICBO Collector cut-off current 2N6466 VCB=110V; IE=0 10 VCB=130V; IE=0 VCE= 100V,IB=0 100 µA VCE= 120V,IB=0 VEB=5V; IC=0 IC=1.5A ; VCE=4V IC=0.5A ; VCE=10V 15 10 µA µA 2N6465 ICEO Collector cut-off current 2N6466 IEBO hFE fT Emitter cut-off current DC current gain 150 Transition frequency 5 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6465 2N6466 Fig.2 outline dimensions 3