2N6470

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose types of switching and linear-amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6470 2N6471 2N6472 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6470 VCBO Collector-base voltage 2N6471 2N6472 2N6470 VCEO Collector-emitter voltage 2N6471 2N6472 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 50 70 90 40 60 80 5 15 5 125 150 -65~200 V A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.4 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6470 VCEO(SUS) Collector-emitter sustaining voltage 2N6471 2N6472 VCEsat-1 VCEsat-2 VBE ICEO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=5A; IB=0.5A IC=15A; IB=3A IC=15A ; VCE=4V IC=0.2A ;IB=0 2N6470 2N6471 2N6472 SYMBOL CONDITIONS MIN 40 60 80 TYP. MAX UNIT V 1.3 3.5 3.5 1.0 0.2 5.0 1.0 20 5 4 150 V V V mA mA mA VCE=1/2Rated VCEO; IB=0 VCE= Rated VCEO; VBE=-1.5V TC=150 VEB=5V; IC=0 IC=5A ; VCE=4V IC=15A ; VCE=4V IC=0.5A ; VCE=10V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6470 2N6471 2N6472 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3