2N6473

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6473 2N6474 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·General-purpose medium power for switching and amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6473 VCBO Collector-base voltage 2N6474 2N6473 VCEO Collector-emitter voltage 2N6474 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 120 5 4 2 40 150 -65~150 V A A W Open emitter 130 100 V CONDITIONS VALUE 110 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 3.125 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6473 VCEO(SUS) Collector-emitter sustaining voltage 2N6474 VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage 2N6473 ICEX Collector cut-off current 2N6474 2N6473 ICEO Collector cut-off current 2N6474 IEBO hFE-1 hFE-2 COB fT Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency VCE=60V;IB=0 VEB=5V; IC=0 IC=1.5A ; VCE=4V IC=4A ; VCE=2.5V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=4V IC=1.5A;IB=0.15A IC=4A;IB=2A IC=1.5A ; VCE=4V IC=4A ; VCE=2.5V VCE=100V;VBE=-1.5V TC=100 VCE=120V;VBE=-1.5V TC=100 VCE=50V;IB=0 IC=0.1A ;IB=0 CONDITIONS 2N6473 2N6474 SYMBOL MIN 100 TYP. MAX UNIT V 120 1.2 2.5 2.0 3.5 0.1 2.0 mA 0.1 2.0 V V V V 1.0 mA 1.0 15 2 250 4 150 mA pF MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6473 2N6474 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3