SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·High voltage ratings ·Excellent safe operating area APPLICATIONS ·Series and shunt regulators ·High-fidelity amplifiers ·Power switching circuits ·Solenoid drivers
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2N6477 2N6478
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO PARAMETER 2N6477 Collector-base voltage 2N6478 2N6477 VCEO VEBO IC ICM IB PT Tj Tstg Collector-emitter voltage 2N6478 Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 140 5 2.5 4 1 50 150 -65~150 V A A A W Open emitter 160 120 V CONDITIONS VALUE 140 V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.5 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N6477 IC=0.1A ;IB=0 2N6478 VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage 2N6477 2N6478 2N6477 ICEO Collector cut-off current 2N6478 IEBO hFE-1 hFE-2 COB fT Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency VCE=100V;IB=0 VEB=5V; IC=0 IC=1.0A ; VCE=4V IC=2.5A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=4V IC=1.0A;IB=0.1A IC=2.5A;IB=0.5A IC=1.0A ; VCE=4V IC=2.5A ; VCE=4V VCE=130V VCE=120V; TC=150 VCE=150V VCE=140V; TC=150 VCE=80V;IB=0 CONDITIONS
2N6477 2N6478
SYMBOL
MIN 120
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
V 140 1.0 2.0 1.8 3.0 2.0 10 2.0 10 V V V V
ICEX
Collector cut-off current VBE=-1.5V
mA
2.0
mA
2.0 25 5 250 0.2 150
mA
pF MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6477 2N6478
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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