2N6499

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6499 DESCRIPTION ·With TO-220C package ·High breakdown voltage APPLICATIONS ·Designed for high voltage inverters, switching regulators and line operated amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 450 350 6 5 10 2 80 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.56 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=2.5A; IB=0.5A IC=5A ;IB=2A IC=2.5A; IB=0.5A IC=5A ;IB=2A VCE=450V;VBE=-1.5V VCE=225V;VBE=-1.5V;TC=100 VEB=6V; IC=0 IC=2.5A ; VCE=10V IC=5A ; VCE=10V IC=250mA ; VCE=10V;f=1MHz 10 3 5.0 MIN 350 2N6499 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEX IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 1.5 5.0 1.5 2.5 1.0 10 1.0 75 V V V V mA mA Switching times tr tstg tf Rise time Storage time Fall time IC=2.5A, IB1=-IB2=0.5A VCC=125V 1.0 2.5 1.0 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6499 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3