2N6533

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·DARLINGTON ·High DC current gain APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6533 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 120 5 8 15 0.25 65 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL R9JC PARAMETER Thermal resistance junction to case VALUE 1.92 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2N6533 SYMBOL MAX UNIT VCEO(SUS) VCEsat-1 VCEsat-2 VBE-1 VBE-2 ICEV ICEO IEBO hFE-1 hFE-2 VF Collector-emitter sustaining voltage IC=0.2A ; IB=0 IC=3A ;IB=6mA IC=8A; IB=80mA IC=3A ; VCE=3V IC=8A ; VCE=3V VCE=120V; VBE=-1.5V TC=125 VCE=120V; IB=0 VEB=5V; IC=0 IC=3A ; VCE=3V IC=8A ; VCE=3V IF=5A 120 V Collector-emitter saturation voltage 2.0 V Collector-emitter saturation voltage 3.0 V Base -emitter on voltage 2.8 V Base -emitter on voltage 4.5 0.5 5.0 1.0 V Collector cut-off current mA Collector cut-off current mA Emitter cut-off current 5.0 mA DC current gain 1000 10000 DC current gain 100 5000 Diode forward voltage 4.0 V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6533 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3