2N6543

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Switching regulators ·PWM inverters and motor controls ·Solenoid and relay drivers ·Deflection circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6542 2N6543 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6542 VCBO Collector-base voltage 2N6543 2N6542 VCEO Collector-emitter voltage 2N6543 VEBO IC ICM IB IE IEM PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Emitter current Emitter current-peak Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base 400 8 5 10 5 10 20 100 200 -65~200 V A A A A A W Open emitter 850 300 V CONDITIONS VALUE 650 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6542 2N6543 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6542 IC=0.1A ;IB=0 2N6543 IC=3A; IB=0.6A IC=5A; IB=1.0A IC=3A; IB=0.6A VCE=650V; VBE(off)=1.5V TC=100 VCE=850V; VBE(off)=1.5V TC=100 VEB=8V; IC=0 IC=1.5A ; VCE=2V IC=3A ; VCE=2V IC=0.2A ; VCE=10V;f=1MHz 12 7 6 400 1.0 5.0 1.4 0.5 3.0 0.5 3.0 1.0 60 35 35 MHz V V V CONDITIONS MIN 300 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2N6542 ICEV Collector cut-off current 2N6543 mA IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Trainsistion frequency mA Switching times td tr tstg tf Delay time Rise time Storage time Fall time 0.05 0.7 4.0 0.8 µs µs µs µs VCC=250V; IC=3.0A IB1=-IB2=0.6A;tp=0.1ms THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6542 2N6543 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3