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2N6547

2N6547

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2N6547 - Silicon NPN Power Transistors - Savantic, Inc.

  • 数据手册
  • 价格&库存
2N6547 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ·Switching regulators ·PWM inverters and motor controls ·Solenoid and relay drivers ·Deflection circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6546 2N6547 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N6546 Collector-base voltage 2N6547 2N6546 VCEO VEBO IC ICM IB IE IEM PT Tj Tstg Collector-emitter voltage 2N6547 Emitter-base voltage Collector current Collector current-peak Base current Emitter current Emitter current-peak Total power dissipation Junction temperature Storage temperature Tc=25 Open collector Open base 400 9 15 30 10 25 50 175 200 -65~200 V A A A A A W Open emitter 850 300 V CONDITIONS VALUE 650 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6546 IC=100mA ; IB=0 2N6547 IC=10A; IB=2A IC=15A; IB=3A IC=10A ;IB=2A VCE=650V; VBE(off)=1.5V TC=100 VCE=850V ;VBE(off)=1.5V TC=100 VEB=9V; IC=0 IC=5A ; VCE=2V IC=10A ; VCE=2V IC=0.5A ; VCE=10V;f=1MHz CONDITIONS 2N6546 2N6547 SYMBOL MIN 300 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 400 1.5 5.0 1.6 1.0 4.0 1.0 4.0 1.0 12 6 6 60 30 35 MHz V V V mA mA mA VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2N6546 ICEV Collector cut-off current 2N6547 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency Switching times td tr tstg tf Delay time Rise time Storage time Fall time IC=10A; IB1=-IB2=2.0A VCC=250V; tp=0.1ms; Duty CycleD2.0% 0.05 1.0 4.0 0.8 µs µs µs µs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6546 2N6547 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6546 2N6547 4
2N6547 价格&库存

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