2N6594

2N6594

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2N6594 - Silicon PNP Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2N6594 数据手册
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION ·With TO-3 package ·Complement to type 2N6569 ·Wide area of safe operation APPLICATIONS ·Designed for low voltage amplifier power switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB IE IEM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Emitter current Emitter current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -45 -40 -5 -12 -24 -5 -17 -34 100 200 -65~200 UNIT V V V A A A A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.1A ;IB=0 IC=-4A; IB=-0.4A IC=-12A; IB=-2.4A IC=-4A; IB=-0.4A VCE=-40V; IB=0 VCB=-45V; IE=0 VEB=-5V; IC=0 IC=-4A ; VCE=-3V IC=-12A ; VCE=-4V IC=-1.0A ; VCE=-4V;f=0.5MHz 15 5 1.5 MIN -40 TYP. SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEO ICBO IEBO hFE-1 hFE-2 fT 2N6594 MAX UNIT V -1.5 -4.0 -2.0 -1.0 -1.0 -5.0 200 100 20 V V V mA mA mA MHz Switching times td tr tstg tf Delay time Rise time Storage time Fall time IC=-2A; IB1=-IB2=-0.2A VCC=-30V; tp=25µs; Duty CycleA2.0% 0.4 1.5 5.0 1.5 µs µs µs µs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6594 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3
2N6594
物料型号: - 型号为2N6594。

器件简介: - 2N6594是一款硅PNP功率晶体管,采用TO-3封装,是2N6569型号的补充,具有广泛的安全工作区域,适用于低电压放大器功率开关应用。

引脚分配: - PIN 1: Base(基极) - PIN 2: Emitter(发射极) - PIN 3: Collector(集电极)

参数特性: - 绝对最大额定值: - VCBO(集电极-基极电压):-45V - VCEO(集电极-发射极电压):-40V - VEBO(发射极-基极电压):-5V - Ic(集电极电流):-12A - ICM(集电极峰值电流):-24A - Is(基极电流):-5A - IE(发射极电流):-17A - IEM(发射极峰值电流):-34A - Pc(集电极功率耗散):100W - Tj(结温):200℃ - Tstg(存储温度):-65~200℃

功能详解: - 特性表中列出了在不同工作条件下的参数,包括维持电压、饱和电压、截止电流、直流电流增益和转换频率等。

应用信息: - 2N6594设计用于低电压放大器功率开关应用。

封装信息: - 封装类型为TO-3,PDF中提供了简化的外形图和符号,以及外形尺寸图(未标注的公差:±0.1mm)。
2N6594 价格&库存

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