2N6653

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·Switcing regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6653 Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature Tc=25 CONDITIONS Open emitter Open base Open collector VALUE 350 300 6 20 30 150 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2N6653 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 300 V V(BR)CBO Collector-emitter breakdown voltage IC=1mA ; IE=0 350 V VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=2A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=3A 1.8 V VBEsat Base-emitter saturation voltage IC=15A; IB=3A VCE=350V;VBE(off)=-1.5V TC=150 VEB=6V; IC=0 1.8 0.1 2.0 0.1 V ICEV Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1A ; VCE=5V 15 50 hFE -2 DC current gain IC=15A ; VCE=5V 10 fT Transition frequency IC=0.5A ; VCE=10V 15 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6653 Fig.2 Outline dimensions 3