2N6677

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS Designed for high voltage switching applications such as : ·Off-line power supplies ·Converter circuits ·Pulse width modulated regulators PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6676 2N6677 2N6678 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6676 VCBO Collector-base voltage 2N6677 2N6678 2N6676 VCEO Collector-emitter voltage 2N6677 2N6678 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Tc=25 Open collector Open base Open emitter CONDITIONS VALUE 450 550 650 300 350 400 8 15 20 5 175 200 -65~200 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6676 VCEO(SUS) Collector-emitter sustaining voltage 2N6677 2N6678 VCEsat VBEsat ICEV IEBO hFE-1 hFE -2 COB fT Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IC=15A; IB=3A IC=15A; IB=3A IC=0.2A ; IB=0 SYMBOL 2N6676 2N6677 2N6678 CONDITIONS MIN 300 350 400 TYP. MAX UNIT V 1.5 1.5 0.1 1.0 2.0 15 8 500 3 50 V V mA mA VCE=RatedVCEV;VBE(off)=-1.5V TC=100 VEB=8V; IC=0 IC=1A ; VCE=5V IC=15A ; VCE=3V IE=0 ;VCB=10V;f=0.1MHz IC=1A ; VCE=10V;f=5.0MHz pF MHz Switching times td tr ts tf Delay time Rise time Storage time Fall time IC=15A; IB1=-IB2=3.0A VCC=200V; tp=20µs; Duty CycleB2.0% VBB=6V,RL=1.35E 0.2 0.6 2.5 0.6 µs µs µs µs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6676 2N6677 2N6678 Fig.2 Outline dimensions 3