2N6702

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·Designed for converters,inverters, pulse-width-modulated regulators and a variety of power switching circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6702 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 140 90 7 7 10 6 50 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2N6702 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0 90 V VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=0.5A 0.8 V VCEsat-2 Collector-emitter saturation voltage IC=7A;IB=0.7A 1.5 V VBE sat Base-emitter saturation voltage IC=5A;IB=0.5A VCE=140V;VBE=1.5V TC=125 VEB=7V; IC=0 1.5 0.1 1.0 0.1 V ICEV Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=0.2A ; VCE=2V 30 hFE-2 DC current gain IC=5A ; VCE=2V 20 Cob Output capacitance IE=0 ; f=0.1MHz,VCB=10V 50 150 pF fT Transition frequency IC=0.5A ; VCE=10V 50 200 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6702 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3