2N6739

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High voltage ratings ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Suited for 115 and 220V switchmode applications such as switching regulators, Inverters and DC-DC converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6738 2N6739 2N6740 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6738 VCBO Collector-base voltage 2N6739 2N6740 2N6738 VCEO Collector-emitter voltage 2N6739 2N6740 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 450 550 650 300 350 400 8 8 10 4 100 150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.25 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6738 VCEO(SUS) Collector-emitter sustaining voltage 2N6739 2N6740 VCEsat-1 VCEsat-2 VBEsat ICEV IEBO hFE fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency IC=5A;IB=1A IC=8A;IB=4A IC=5A;IB=1A IC=0.2A ;IB=0 2N6738 2N6739 2N6740 SYMBOL CONDITIONS MIN 300 350 400 TYP. MAX UNIT V 1.0 2.0 1.6 0.1 1.0 2.0 10 10 40 60 V V V mA mA VCEV=Rated VCEV;VBE=-1.5V TC=100 VEB=8V; IC=0 IC=5A ; VCE=3V IC=0.2A ; VCE=10V MHz Switching times td tr ts tf Delay time Rise time Storage time Fall time IC=5A;IB1=-IB2=1A VCC=125V tp=20µs,Duty cycleE1.0% 0.1 0.4 2.5 0.5 µs µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6738 2N6739 2N6740 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3