2N6753

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6753 2N6754 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6753 VCBO Collector-base voltage 2N6754 VCEO VEBO IC IB PD Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open base Open collector Open emitter 1000 500 8 10 5 150 -65~175 -65~200 V V A A W CONDITIONS VALUE 900 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2N6753 ICEV Collector cut-off current 2N6754 IEBO hFE COB fT Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=0.2A ;IB=0 IC=5A; IB=1A IC=10A; IB=3A IC=5A ;IB=1A VCE=900V; VBE=-1.5V TC=100 VCE=1000V; VBE=-1.5V TC=100 VEB=8V; IC=0 IC=5A ; VCE=3V IE=0 ; VCB=10V;f=0.1MHz IC=0.2A ; VCE=10V 2N6753 2N6754 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat MIN 500 TYP. MAX UNIT V 1.0 3.0 1.3 0.1 1.0 V V V mA 0.1 1.0 2.0 8 50 15 40 250 60 pF MHz mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6753 2N6754 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3