2SA1012

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1012 DESCRIPTION ·With TO-220 package ·Complement to type 2SD2562 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -5 -5 25 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-10mA , IB=0 IC=-3A; IB=-0.15A IC=-3A; IB=-0.15A VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-3A ; VCE=-1V IC=-1A ; VCE=-4V f=1MHz ; VCB=10V 70 30 MIN -50 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE –1 hFE -2 fT Cob 2SA1012 TYP. MAX UNIT V -0.4 -1.2 -1 -1 240 V V µA µA 60 170 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=-3A ;IB1=- IB2=-0.15A RL=10A,VCC=30V 0.1 1.0 0.1 µs µs µs hFE-1 Classifications O 70-140 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1012 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1012 4 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1012 5