2SA1041

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1041 DESCRIPTION ·With TO-3 package ·High transition frequency ·Excellent safe operating area APPLICATIONS ·Power switching applications ·High frequency power amplifier ·Switching regulators ·DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -7 -15 100 175 -55~200 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA1041 SYMBOL TYP. MAX UNIT V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-0.1mA ;IE=0 IE=-0.1mA ;IC=0 IC=-7A; IB=-0.7A IC=-7A; IB=-0.7A VCB=-120V; IE=0 VEB=-7V; IC=0 IC=-1.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1.0MHz IC=-1A ; VCE=-10V -120 V Collector-base breakdown voltage -120 V Emitter-base breakdown voltage -7 V Collector-emitter saturation voltage -1.5 V Base-emitter saturation voltage -1.8 V Collector cut-off current -50 µA Emitter cut-off current -50 µA DC current gain 35 200 Output capacitance 350 pF Transition frequency 60 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1041 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3