2SA1050

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1050 DESCRIPTION ·With TO-3 package ·High transition frequency ·Excellent safe operating area APPLICATIONS ·For audio and general purpose power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -5 -12 100 175 -55~200 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA1050 SYMBOL TYP. MAX UNIT V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Collector-emitter breakdown voltage IC=-25mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-8A; IB=-0.8A IC=-6A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-6A ; VCE=-5V IC=-1A ; VCE=-10V -140 V Collector-base breakdown voltage -140 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -2.5 V Base-emitter on voltage -1.5 V Collector cut-off current -10 µA Emitter cut-off current -10 µA DC current gain 55 160 DC current gain 35 Transition frequency 70 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1050 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3