SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1051
DESCRIPTION ·With TO-3 package ·High transition frequency ·Excellent safe operating area APPLICATIONS ·For audio and general purpose power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -15 -1.5 150 175 -55~200 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SA1051
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT
Collector-emitter breakdown voltage
IC=-25mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-10A; IB=-1A IC=-8A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-8A ; VCE=-5V IC=-1A ; VCE=-10V
-150
V
Collector-base breakdown voltage
-150
V
Emitter-base breakdown voltage
-5
V
Collector-emitter saturation voltage
-3.0
V
Base-emitter on voltage
-1.5
V
Collector cut-off current
-10
µA
Emitter cut-off current
-10
µA
DC current gain
55
160
DC current gain
35
Transition frequency
60
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1051
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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