2SA1063

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1063 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·Designed for general purpose switching and amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -6 -6 -10 80 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA1063 SYMBOL TYP. MAX UNIT V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Collector-emitter breakdown voltage IC=-25mA ;IB=0 IC=-4A ;IB=-0.4A IC=-4A;VCE=-5V VCB=-150V; IE=0 VEB=-3V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-0.5A ; VCE=-5V -150 V Collector-emitter saturation voltage -2.0 V Base-emitter on voltage -1.8 V Collector cut-off current -50 µA Emitter cut-off current -50 µA DC current gain 40 280 DC current gain 20 Transition frequency 50 MHz hFE-1 Classifications R 40-80 Q 60-120 P 90-180 O 140-280 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1063 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3