2SA1069A

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1069 2SA1069A DESCRIPTION ·With TO-220 package ·Complement to type 2SC2516/2516A ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC converters ·High-frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SA1069 VCEO Collector-emitter voltage 2SA1069A VEBO IC ICM IB Emitter-base voltage Collector current Collector current-Peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 Open collector Open base -80 -12 -5 -10 -2.5 1.5 W V A A A CONDITIONS Open emitter VALUE -80 -60 V UNIT V SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SA1069 IC=-3.0A ,IB=-0.3A;L=1mH 2SA1069A IC=-3A; IB=-0.3A IC=-3A; IB=-0.3A VCB=-60V; IE=0 CONDITIONS 2SA1069 2SA1069A SYMBOL MIN -60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V -80 -0.6 -1.5 V V VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SA1069 2SA1069A ICBO Collector cut-off current -10 VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.3A ; VCE=-5V IC=-3A ; VCE=-5V 40 40 200 -10 µA IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain µA Switching times ton tstg tf Turn-on time Storage time Fall time IC=-3A ; VCC=-50V IB1=-IB2=-0.3A;RL=17C 0.5 2.5 0.5 µs µs µs hFE-2 Classifications M 40-80 L 60-120 K 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1069 2SA1069A Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3