2SA1111

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION ·With TO-220 package ·Complement to type 2SC2591/2592 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SA1111 VCBO Collector-base voltage 2SA1112 2SA1111 VCEO Collector-emitter voltage 2SA1112 VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -180 -5 -1 -1.5 20 150 -55~150 V A A W Open emitter -180 -150 V CONDITIONS VALUE -150 V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SA1111 V(BR)CEO Collector-emitter breakdown voltage 2SA1112 V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IE=-10µA ,IC=0 IC=-0.5A; IB=-50mA IC=-0.5A; IB=-50mA VCB=-120V; IE=0 VEB=-4V; IC=0 IC=-150mA ; VCE=-10V IC=-500mA ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=50mA ; VCE=-10V IC=-0.1mA ,IB=0 CONDITIONS 2SA1111 2SA1112 SYMBOL MIN -150 TYP. MAX UNIT V -180 -5 -0.5 -1.0 -2.0 -2.0 -1 -1 65 50 30 200 pF MHz 330 V V V µA µA hFE-1 Classifications P 65-110 Q 90-155 R 130-220 S 185-330 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1111 2SA1112 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 4