SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1125
DESCRIPTION ·With TO-220 package ·Complement to type 2SC2633 ·High breakdown voltage APPLICATIONS ·For audio frequency high voltage amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -50 -100 1.5 150 -55~150 UNIT V V V mA mA W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-0.1mA ,IB=0 IE=-10µA ,IC=0 IC=-30mA; IB=-3mA VCB=-100V; IE=0 VEB=-4V; IC=0 IC=-10mA ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-10mA ; VCE=-10V 90 MIN -150 -5
2SA1125
SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE COB fT
TYP.
MAX
UNIT V V
-1.0 -1 -1 450 5 200
V µA µA
pF MHz
hFE Classifications Q 90-155 R 130-220 S 185-330 T 260-450
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1125
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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