2SA1135

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1135 DESCRIPTION ·With TO-3PN package ·Complement to type 2SC2665 APPLICATIONS ·For general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -6 -4 -1 55 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-25mA ;IB=0 IC=-2A; IB=-0.2A VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-4V IE=0.2A ; VCE=-10V 40 MIN -80 2SA1135 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V -1.0 -1.0 -1.0 V mA mA 10 MHz Switching times tr tstg tf Rise time Storage time Fall time IC=-2A ; VCC=-6V IB1=-IB2=-0.3A;RL=3@ 1.0 0.4 0.15 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1135 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3