2SA1141

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SC2681 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SA1141 · Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -115 -115 -5 -10 -15 100 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-4.5A ;IB=-0.45A IC=-4.5A ; VCE=-2V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-2V IC=-4.5A ; VCE=-2V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-2V 60 40 MIN 2SA1141 SYMBOL VCEsat VBE ICBO IEBO hFE -1 hFE -2 COB fT TYP. -0.7 -1.2 MAX -1.5 -2.0 -50 -50 200 UNIT V V µA µA 390 90 pF MHz hFE-1 classifications R 60-120 Q 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1141 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3