2SA1146

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1146 DESCRIPTION ·With TO-3P(I) package ·High power dissipations APPLICATIONS ·For audio and general purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -140 -140 -5 -10 -2 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1146 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-25mA ,IB=0 IE=-1mA ,IC=0 IC=-5A; IB=-0.5A VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-0.5A ; VCE=-10V 55 35 70 MHz MIN -140 -5 -2.0 -10 -10 160 TYP. MAX UNIT V V V µA µA SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1146 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3