2SA1166

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1166 DESCRIPTION ·With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications PINNING (see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -6 -15 -5 150 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-25mA ; IB=0 IC=-1mA ; IE=0 IE=-1mA ; IC=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A VCB=-150V; IE=0 VEB=-6V; IC=0 IC=-5A ; VCE=-4V IC=-1A ; VCE=-10V 50 60 MIN -150 -150 -6 2SA1166 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V V -2.0 -2.5 -10 -10 V V µA µA MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1166 Fig.2 outline dimensions 3