2SA1180

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1180 DESCRIPTION ·With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -6 -10 -4 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA1180 SYMBOL TYP. MAX UNIT V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE Collector-emitter breakdown voltage IC=-25mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-180V; IE=0 VEB=-6V; IC=0 IC=-5A ; VCE=-4V -180 V Collector-base breakdown voltage -180 V Emitter-base breakdown voltage -6 V Collector-emitter saturation voltage -2.0 V Base-emitter saturation voltage -2.5 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 30 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1180 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3