2SA1186

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1186 DESCRIPTION ·With TO-3PN package ·High current capability ·Complement to type 2SC2837 APPLICATIONS ·Audio and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -5 -10 -2 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-25mA ;IB=0 IC=-5A; IB=-0.5A VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-4V IE=0 ; VCB=-80V;f=1MHz IE=1A ; VCE=-12V 50 MIN -150 2SA1186 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE Cob fT TYP. MAX UNIT V -2.0 -0.1 -0.1 V mA mA 110 60 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A;RL=12A IB1=-IB2=-0.5A VCC=-60V 0.25 0.80 0.20 µs µs µs hFE Classifications O 50-100 P 70-140 Y 90-180 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1186 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1186 4