SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1195
DESCRIPTION ·With TO-202 package ·High power dissipation ·Complement to type 2SC2483 APPLICATIONS ·For high voltage and general purpose amplification
PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 15 175 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -6 -1.5 -0.5 2 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SA1195
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO VCEsat VBE hFE-1 hFE-2 ICBO IEBO COB fT
Collector-emitter breakdown voltage
IC=-10mA; IB=0 IC=-500mA ;IB=-50m A IC=-5mA ; VCE=-5V IC=-200mA ; VCE=-5V IC=-500mA ; VCE=-5V VCB=-150V; IE=0 VEB=-6V; IC=0 IE=0; VCB=-10V;f=1MHz IE=-100mA ; VCB=-5V
160
V
Collector-emitter saturation voltage
-1.0
V
Base-emitter on voltage
-0.7
V
DC current gain
60
200
DC current gain
40
Collector cut-off current
-1
µA
Emitter cut-off current
-1
µA
Output capacitance
35
pF
Transition frequency
15
50
MHz
hFE classifications R 60-120 O 100-200
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1195
Fig.2 outline dimensions
3
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