2SA1279

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1279 DESCRIPTION ·With TO-220F package ·Low collector saturation voltage APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -5 -8 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-10mA ; IB=0 IC=-3A;IB=-0.15A IC=-3A;IB=-0.15A VCB=-60V;IE=0 VEB=-7V; IC=0 IC=-1A ; VCE=-1V IC=-3A ; VCE=-1V IC=-1A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz 70 30 MIN -60 2SA1279 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -0.4 -1.2 -1 -1 240 V V µA µA 60 200 MHz pF 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1279 Fig.2 Outline dimensions 3