2SA1280

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1280 DESCRIPTION ·With TO-220F package ·High breakdown voltage ·High power dissipation APPLICATIONS ·For use in low frequency power amplifier Color TV vertical deflection output PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -6 -1.5 25 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-10mA ; IB=0 IC=-500mA;IB=-50mA IC=-50mA ; VCE=-4V VCB=-120V;IE=0 VEB=-6V; IC=0 IC=-50mA ; VCE=-4V IC=-500mA ; VCE=-10V IC=-500mA ; VCE=-10V IE=0 ; VCB=-100V;f=1MHz 60 60 4 MIN -150 2SA1280 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -3.0 -1.0 -1 -1 200 V V µA µA MHz 30 pF 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1280 Fig.2 Outline dimensions 3