SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-220 package ·Low collector saturation voltage. ·Short switching time. APPLICATIONS ·Various inductance lamp drivers for electrical equipment. ·Inverters, converters ·Power amplifier ·High-speed switching
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
2SA1355
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -70 -70 -5 -4 30 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA ,IE=0 IC=-1mA ,IB=0 IE=-1mA ,IC=0 IC=-2A; IB=-0.2A IC=-2A; IB=-0.2A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-1A ; VCE=-5V 70 MIN -70 -70 -5
2SA1355
SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT
TYP.
MAX
UNIT V V V
-0.5 -1.2 -100 -100 280 40
V V µA µA
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1355
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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