2SA1359

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1359 · DESCRIPTION ·With TO-126 package ·Complement to type 2SC3422 ·Good linearity of hFE APPLICATIONS ·Audio frequency amplifier ·Low speed switching ·Suitable for output stage of 5W car radio and car stereo PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55 +150 CONDITIONS Open emitter Open base Open collector VALUE -40 -40 -5 -3 -1 1.5 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-2A; IB=-0.2A IC=-0.5A ; VCE=-2V VCB=-40V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-2.5A ; VCE=-2V IE=0 ; VCB=-10V f=1MHz IC=-0.5A ; VCE=-2V 80 25 MIN -40 2SA1359 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 Cob fT TYP. MAX UNIT V -0.8 -1.0 -0.1 -0.1 240 V V µA µA 35 100 pF MHz hFE-1 Classifications O 80-160 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1359 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1359 4