2SA1360

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1360 · DESCRIPTION ·With TO-126 package ·Complement to type 2SC3423 ·High transition frequency APPLICATIONS ·Audio frequency amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 5 150 -55 +150 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -50 -5 1.2 W UNIT V V V mA mA SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ;IB=0 IC=-10mA; IB=-1mA IC=-10mA ; VCE=-5V VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-10mA ; VCE=-5V IE=0 ; VCB=-10V f=1MHz IC=-10mA ; VCE=-10V 80 MIN -150 2SA1360 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE Cob fT TYP. MAX UNIT V -1.0 -0.8 -0.1 -0.1 240 2.5 200 V V µA µA pF MHz hFE Classifications O 80-160 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1360 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1360 4