2SA1513

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1513 DESCRIPTION ·With TO-3PML package ·High current capability ·Low collector saturation voltage APPLICATIONS ·For high speed and high power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Maximum absolute ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 60 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -60 -6 -15 3.5 W UNIT V V V A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-25mA; IB=0 IE=-1mA; IC=0 IC=-12 A;IB=-0.6 A IC=-12 A;IB=-0.6 A VCB=-60V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-2V IE=0 ; VCB=-10V;f=1MHz IC=-1.5A ; VCE=-10V 100 MIN -60 -6 2SA1513 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V V -0.5 -1.5 -10 -10 400 300 80 V V µA µA pF MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1513 Fig.2 Outline dimensions 3