2SA1758

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1758 DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -60 -5 -12 30 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA ,IB=0 IE=-50µA ,IC=0 IC=-6A; IB=-0.3A IC=-8A; IB=-0.4A IC=-6A; IB=-0.3A IC=-8A; IB=-0.4A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-2V IC=-1A ; VCE=-10V 60 MIN -60 -5 2SA1758 SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO IEBO hFE fT TYP. MAX UNIT V V -0.3 -0.5 -1.2 -1.5 -10 -10 320 90 V V V V µA µA MHz hFE Classifications D 60-120 E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1758 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3