SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1878
DESCRIPTION ·With ITO-220 package ·Switching power transistor ·Low collector saturation voltage
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -7 -5 -10 -1.5 -2.0 25 150 -55~150 UNIT V V V A A A A W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-2.5A; IB=-0.25A IC=-2.5A; IB=-0.25A At rated volatge At rated volatge At rated volatge IC=-2.5A ; VCE=-2V IC=-0.5A ; VCE=-10V 70 MIN -80 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE fT
2SA1878
TYP.
MAX
UNIT V
-0.3 -1.2 -0.1 -0.1 -0.1
V V mA mA mA
50
MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=-2.5A;IB1=-0.25A IB2=0.25A ,RL=12@ VBB2=4V 0.3 1.5 0.2 µs µs µs
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1878
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
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