SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1887
DESCRIPTION ·With TO-220F package ·Low collector saturation voltage APPLICATIONS ·High current switching applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.0 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -80 -50 -7 -10 25 W UNIT V V V A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ; IB=0 IC=-5A ;IB=-0.25A IC=-5A ;IB=-0.25A VCB=-70V; IE=0 VEB=-7V; IC=0 IC=-1A ; VCE=-1V IE=0; VCB=-10V;f=1MHz IC=-1A ; VCE=-1V 120 MIN -50
2SA1887
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT
TYP.
MAX
UNIT V
-0.2 -0.95
-0.4 -1.4 -1.0 -1.0 400
V V µA µA
215 45
pF MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1887
Fig.2 Outline dimensions
3
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