2SA1942

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1942 DESCRIPTION ·With TO-3PL package ·Complement to type 2SC5199 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -12 -1.2 120 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA1942 SYMBOL TYP. MAX UNIT V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB Collector-emitter breakdown voltage IC=-50mA ;IB=0 IC=-8A ;IB=-0.8A IC=-6A ; VCE=-5V VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-6A ; VCE=-5V IC=-1A ; VCE=-5V IE=0; f=1MHz;VCB=-10V -160 V Collector-emitter saturation voltage -2.5 V Base-emitter voltage -1.5 V Collector cut-off current -5 µA Emitter cut-off current -5 µA DC current gain 55 160 DC current gain 35 Transition frequency 30 MHz Collector output capacitance 320 pF hFE-1 classifications R 55-110 O 80-160 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1942 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1942 4