SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1942
DESCRIPTION ·With TO-3PL package ·Complement to type 2SC5199 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -5 -12 -1.2 120 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SA1942
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB
Collector-emitter breakdown voltage
IC=-50mA ;IB=0 IC=-8A ;IB=-0.8A IC=-6A ; VCE=-5V VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-6A ; VCE=-5V IC=-1A ; VCE=-5V IE=0; f=1MHz;VCB=-10V
-160
V
Collector-emitter saturation voltage
-2.5
V
Base-emitter voltage
-1.5
V
Collector cut-off current
-5
µA
Emitter cut-off current
-5
µA
DC current gain
55
160
DC current gain
35
Transition frequency
30
MHz
Collector output capacitance
320
pF
hFE-1 classifications R 55-110 O 80-160
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1942
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1942
4
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