2SA1943

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1943 DESCRIPTION ·With TO-3PL package ·Complement to type 2SC5200 APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector MAX -230 -230 -5 -15 -1.5 150 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA1943 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -230 V VCEsat Collector-emitter saturation voltage IC=-8A IB=-0.8A -3.0 V VBE Base-emitter voltage IC=-7A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-230V; IE=0 -5 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 µA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-7A ; VCE=-5V 35 fT Transition frequency IC=-1A ; VCE=-5V 30 MHz COB Collector output capacitance f=1MHz;VCB=-10V 360 pF hFE-1 classifications R 55-110 O 80-160 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1943 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 SavantIC Semiconductor Product Specification Silicon Power Transistors 2SA1943 4