SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA483
DESCRIPTION ·With TO-66 package ·Complement to type 2SC783 ·High voltage: VCEO=-150V(min) APPLICATIONS ·Power amplifier applications ·Vertical output applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -5 -1.5 1.5 20 150 -65~150 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SA483
SYMBOL
MAX
UNIT
V(BR)CEO V(BR)CBO VCEsat VBE ICBO IEBO hFE COB fT
Collector-emitter breakdown voltage
IC=-10mA ;IB=0 IC=-0.5mA ;IE=0 IC=-0.5A; IB=-50mA IC=-0.5A ; VCE=-10V VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-10V IE=0 ; VCB=-10V;f=1.0MHz IC=-0.1A ; VCE=-10V
-150
V
Collector-base breakdown voltage
-150
V
Collector-emitter saturation voltage
-1.8
V
Base-emitter on voltage
-1.8
V
Collector cut-off current
-0.1
mA
Emitter cut-off current
-0.1
mA
DC current gain
30
240
Output capacitance
50
pF
Transition frequency
10
MHz
hFE Classifications R 30-80 O 70-140 Y 120-240
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA483
Fig.2 outline dimensions
3
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